王阳元文集 第3辑PDF|Epub|txt|kindle电子书版本网盘下载

王阳元文集 第3辑PDF格式电子书版下载

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科学与人生3

从教50年述怀3

理想是人生的甘露，奋斗是不老的诗情——谈科学与人生6

机遇·使命·创新·人生32

战略研究73

信息技术是新的经济发展引擎73

进入“硅石时代”——21世纪集成电路产业与微电子科学技术的发展77

集成电路产业及其科学技术的发展面临着新的历史性突破81

十年磨一剑——集成电路产业历史回顾和发展规律探讨96

科技创新与机制创新推动社会跨越式发展106

关键在于营造有利于创新的机制和环境——对《国家中长期科学和技术发展规划纲要》中集成电路专项实施的讨论109

集成电路50年——发明、发展、面临新的突破和我们的历史机遇112

科学研究方法论及人才培养131

关于美国加州伯克莱大学学术活动情况和加强学术活动的几点建议131

科技创新的社会条件和人才培养134

立足客观需求，着眼科学前沿，努力引领发展，培养高端人才——纪念我校微电子学科建设30年137

教育改革的探索与实践——庆祝北京大学软件与微电子学院成立十周年的讲话154

“心怀芯，天地宽”——在北京大学信息工程学院成立十周年庆典上的讲话158

前沿综述167

SOI技术与三维立体集成电路167

展望九十年代世界高科技发展——微电子将是国际科技竞争的关键199

Challenges of Process Technology in 32nm Technology Node200

32nm及其以下技术节点CMOS技术中的新工艺及新结构器件232

The Neo-industrialization and Integrated Circuits Industry in the Mainland of China247

The driving force for development of IC and system in future： Reducing the power consumption and improving the ratio of performance to power consumption281

学术论文313

一、器件与工艺313

新型SON器件的自加热效应313

Silicon-on-nothing MOSFETs fabricated with hydrogen and helium co-implantation321

LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb330

Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs340

A comparative study on analog/RF performance of UTB GOI and SOI devices349

The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique363

High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator370

Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction378

Process optimization of plasma nitridation SiON for 65nm node gate dielectrics387

Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage397

A TaOx based Threshold Switching Selector for the RRAM Crossbar Array Memory404

Experimental Study on the Variation of NBTI Degradation in Nano-scaled High-K/Metal-gate PFETs410

Design of A 3-5-GHz ultrawideband BiFET mixer using 0.35-μm SiGe BiCMOS technology417

二、电路与系统425

A Programmable Spread Spectrum Clock Generation425

A Low-Voltage Voltage Doubler without Body Effect431

A Physics-Based Equivalent-Circuit Model for On-Chip Symmetric Transformers With Accurate Substrate Modeling438

A PVT Tolerant 10 to 500MHz All-Digital Phase-Locked Loop With Coupled TDC and DCO458

Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps472

Characteristics of Gas Flow within a Micro Diffuser/Nozzle Pump500

A New Test Data Compression Scheme for Multi-scan Designs508

A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process522

An ESD-Aware 2.4GHz PA Design for WLAN Application541