半导体物理性能手册 第2卷 上 英文PDF|Epub|txt|kindle电子书版本网盘下载

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Acknowledgments1

Contents of Other Volumes1

1 Cubic Boron Nitride (c-BN)1

1.1 Structural Properties1

1.1.1 Ionicity1

1.1.2 Elemental Isotopic Abundance and Molecular Weight1

1.1.3 Crystal Structure and Space Group2

1.1.4 Lattice Constant and Its Related Parameters2

1.1.5 Structural Phase Transition3

1.1.6 Cleavage Plane3

1.2 Thermal Properties4

1.2.1 Melting Point and Its Related Parameters4

1.2.2 Specific Heat4

1.2.3 Debye Temperature5

1.2.4 ThermaI Expansion Coefficient6

1.2.5 Thermal Conductivity and Diffusivity6

1.3 Elastic Properties7

1.3.1 Elastic Constant7

1.3.2 Third-Order Elastic Constant8

1.3.3 Young's Modulus,Poisson's Ratio,and Similar8

1.3.4 Microhardness9

1.3.5 Sound Velocity9

1.4 Phonons and Lattice Vibronic Properties10

1.4.1 Phonon Dispersion Relation10

1.4.2 Phonon Frequency10

1.4.3 Mode Grüneisen Parameter12

1.4.4 Phonon Deformation Potential12

1.5 Collective Effects and Related Properties12

1.5.1 Piezoelectric Constant12

1.5.2 Fr？hlich Coupling Constant12

1.6 Energy-Band Structure：Energy-Band Gaps13

1.6.1 Basic Properties13

1.6.2 E0-Gap Region14

1.6.3 Higher-Lying Direct Gap15

1.6.4 Lowest Indirect Gap16

1.6.5 Conduction-Valley Energy Separation17

1.6.6 Direct-Indirect-Gap Transition Pressure17

1.7 Energy-Band Structure：Electron and Hole Effective Masses17

1.7.1 Electron Effective Mass：Γ Valley17

1.7.2 Electron Effective Mass：Satellite Valley17

1.7.3 Hole Effective Mass18

1.8 Electronic Deformation Potential19

1.8.1 Intravalley Deformation Potential：Γ Point19

1.8.2 Intravalley Deformation Potential：High-Symmetry Points20

1.8.3 Intervalley Deformation Potential20

1.9 Electron Affinity and Schottky Barrier Height20

1.9.1 Electron Affinity20

1.9.2 Schottky Barrier Height21

1.10 Optical Properties21

1.10.1 Summary of Optical Dispersion Relations21

1.10.2 The Reststrahlen Region22

1.10.3 At or Near the Fundamental Absorption Edge23

1.10.4 The Interband Transition Region25

1.10.5 Free-Carrier Absorption and Related Phenomena25

1.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties26

1.11.1 Elastooptic Effect26

1.11.2 Linear Electrooptic Constant26

1.11.3 Quadratic Electrooptic Constant26

1.11.4 Franz-Keldysh Effect26

1.11.5 Nonlinear Optical Constant26

1.12 Carrier Transport Properties27

1.12.1 Low-Field Mobility：Electrons27

1.12.2 Low-Field Mobility：Holes27

1.12.3 High-Field Transport：Electrons27

1.12.4 High-Field Transport：Holes27

1.12.5 Minority-Carrier Transport：Electrons in p-Type Materials27

1.12.6 Minority-Carrier Transport：Holes in n-Type Materials27

1.12.7 Impact Ionization Coefficient27

2 Hexagonal Boron Nitride(h-BN)29

2.1 Structural Properties29

2.1.1 Ionicity29

2.1.2 Elemental Isotopic Abundance and Molecular Weight29

2.1.3 Crystal Structure and Space Group30

2.1.4 Lattice Constant and Its Related Parameters30

2.1.5 Structural Phase Transition31

2.1.6 Cleavage Plane31

2.2 Thermal Properties31

2.2.1 Melting Point and Its Related Parameters31

2.2.2 Specific Heat31

2.2.3 Debye Temperature32

2.2.4 Thermal Expansion Coefficient33

2.2.5 Thermal Conductivity and Diffusivity34

2.3 Elastic Properties34

2.3.1 Elastic Constant34

2.3.2 Third-Order Elastic Constant35

2.3.3 Young's Modulus,Poisson's Ratio,and Similar35

2.3.4 Microhardness36

2.3.5 Sound Velocity36

2.4 Phonons and Lattice Vibronic Properties36

2.4.1 Phonon Dispersion Relation36

2.4.2 Phonon Frequency37

2.4.3 Mode Grüneisen Parameter37

2.4.4 Phonon Deformation Potential38

2.5 Collective Effects and Related Properties38

2.5.1 Piezoelectric Constant38

2.5.2 Fr？hlich Coupling Constant38

2.6 Energy-Band Structure：Energy-Band Gaps38

2.6.1 Basic Properties38

2.6.2 E0-Gap Region40

2.6.3 Higher-Lying Direct Gap40

2.6.4 Lowest Indirect Gap41

2.6.5 Conduction-Valley Energy Separation41

2.6.6 Direct-Indirect-Gap Transition Pressure42

2.7 Energy-Band Structure：Electron and Hole Effective Masses42

2.7.1 Electron Effective Mass：Γ Valley42

2.7.2 Electron Effective Mass：Satellite Valley42

2.7.3 Hole Effective Mass42

2.8 Electronic Deformation Potential42

2.8.1 Intravalley Deformation Potential：Γ Point42

2.8.2 Intravalley Deformation Potential：High-Symmetry Points42

2.8.3 Intervalley Deformation Potential43

2 9 Electron Affinity and Schottky Barrier Height43

2.9.1 Electron Affinity43

2.9.2 Schottky Barrier Height43

2.10 Optical Properties43

2.10.1 Summary of Optical Dispersion Relations43

2.10.2 The Reststrahlen Region44

2.10.3 At or Near the Fundamental Absorption Edge45

2.10.4 The Interband Transition Region46

2.10.5 Free-Carrier Absorption and Related Phenomena47

2.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties47

2.11.1 Elastooptic Effect47

2.11.2 Linear Electrooptic Constant47

2.11.3 Quadratic Electrooptic Constant48

2.11.4 Franz-Keldysh Effect48

2.11.5 Nonlinear Optical Constant48

2.12 Carrier Transport Properties48

2.12.1 Low-Field Mobility：Electrons48

2.12.2 Low-Field Mobility：Holes48

2.12.3 High-Field Transport：Electrons48

2.12.4 High-Field Transport：Holes48

2.12.5 Minority-Carrier Transport：Electrons in p-Type Materials48

2.12.6 Minority-Carrier Transport：Holes in n-Type Materials48

2.12.7 Impact Ionization Coefficient48

3 Boron Phosphide(BP)49

3.1 Structural Properties49

3.1.1 Ionicity49

3.1.2 Elemental Isotopic Abundance and Molecular Weight49

3.1.3 Crystal Structure and Space Group50

3.1.4 Lattice Constant and Its Related Parameters50

3.1.5 Structural Phase Transition50

3.1.6 Cleavage Plane51

3.2 Thermal Properties51

3.2.1 Melting Point and Its Related Parameters51

3.2.2 Specific Heat51

3.2.3 Debye Temperature52

3.2.4 Thermal Expansion Coefficient52

3.2.5 Thermal Conductivity and Diffusivity53

3.3 Elastic Properties54

3.3.1 Elastic Constant54

3.3.2 Third-Order Elastic Constant54

3.3.3 Young's Modulus,Poisson's Ratio,and Similar54

3.3.4 Microhardness55

3.3.5 Sound Velocity55

3.4 Phonons and Lattice Vibronic Properties56

3.4.1 Phonon Dispersion Relation56

3.4.2 Phonon Frequency56

3.4.3 Mode Grüneisen Parameter57

3.4.4 Phonon Deformation Potential57

3.5 Collective Effects and Related Properties57

3.5.1 Piezoelectric Constant57

3.5.2 Fr？hlich Coupling Constant57

3.6 Energy-Band Structure：Energy-Band Gaps57

3.6.1 Basic Properties57

3.6.2 E0-Gap Region58

3.6.3 Higher-Lying Direct Gap59

3.6.4 Lowest Indirect Gap59

3.6.5 Conduction-Valley Energy Separation59

3.6.6 Direct-Indirect-Gap Transition Pressure59

3.7 Energy-Band Structure：Electron and Hole Effective Masses60

3.7.1 Electron Effective Mass：Γ Valley60

3.7.2 Electron Effective Mass：Satellite Valley60

3.7.3 Hole Effective Mass60

3.8 Electronic Deformation Potential61

3.8.1 Intravalley Deformation Potential：Γ Point61

3.8.2 Intravalley Deformation Potential：High-Symmetry Points61

3.8.3 Intervalley Deformation Potential61

3.9 Electron Affinity and Schottky Barrier Height62

3.9.1 Electron Affinity62

3.9.2 Schottky Barrier Height62

3.10 Optical Properties62

3.10.1 Summary of Optical Dispersion Relations62

3.10.2 The Reststrahlen Region62

3.10.3 At or Near the Fundamental Absorption Edge62

3.10.4 The Interband Transition Region63

3.10.5 Free-Carrier Absorption and Related Phenomena63

3.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties64

3.11.1 Elastooptic Effect64

3.11.2 Linear Electrooptic Constant64

3.11.3 Quadratic Electrooptic Constant64

3.11.4 Franz-Keldysh Effect64

3.11.5 Nonlinear Optical Constant64

3.12 Carrier Transport Properties64

3.12.1 Low-Field Mobility：Electrons64

3.12.2 Low-Field Mobility：Holes66

3.12.3 High-Field Transport：Electrons66

3.12.4 High-Field Transport：Holes66

3.12.5 Minority-Carrier Transport：Electrons in p-Type Materials66

3.12.6 Minority-Carrier Transport：Holes in n-Type Materials67

3.12.7 Impact Ionization Coefficient67

4 Boron Arsenide(BAs)69

4.1 Structural Properties69

4.1.1 Ionicity69

4.1.2 Elemental Isotopic Abundance and Molecular Weight69

4.1.3 Crystal Structure and Space Group70

4.1.4 Lattice Constant and Its Related Parameters70

4.1.5 Structural Phase Transition70

4.1.6 Cleavage Plane71

4.2 Thermal Properties71

4.2.1 Melting Point and Its Related Parameters71

4.2.2 Specific Heat71

4.2.3 Debye Temperature72

4.2.4 Thermal Expansion Coefficient72

4.2.5 Thermal Conductivity and Diffusivity72

4.3 Elastic Properties73

4.3.1 Elastic Constant73

4.3.2 Third-Order Elastic Constant73

4.3.3 Young's Modulus,Poisson's Ratio,and Similar73

4.3.4 Microhardness74

4.3.5 Sound Velocity75

4.4 Phonons and Lattice Vibronic Properties75

4.4.1 Phonon Dispersion Relation75

4.4.2 Phonon Frequency75

4.4.3 Mode Grüneisen Parameter75

4.4.4 Phonon Deformation Potential75

4.5 Collective Effects and Related Properties75

4.5.1 Piezoelectric Constant75

4.5.2 Fr？hlich Coupling Constant75

4.6 Energy-Band Structure：Energy-Band Gaps76

4.6.1 Basic Properties76

4.6.2 E0-Gap Region78

4.6.3 Higher-Lying Direct Gap78

4.6.4 Lowest Indirect Gap78

4.6.5 Conduction-Valley Energy Separation78

4.6.6 Direct-Indirect-Gap Transition Pressure78

4.7 Energy-Band Structure：Electron and Hole Effective Masses78

4.7.1 Electron Effective Mass：Γ Valley78

4.7.2 Electron Effective Mass：Satellite Valley79

4.7.3 Hole Effective Mass79

4.8 Electronic Deformation Potential79

4.8.1 Intravalley Deformation Potential：Γ Point79

4.8.2 Intravalley Deformation Potential：High-Symmetry Points79

4.8.3 Intervalley Deformation Potential80

4.9 Electron Affinity and Schottky Barrier Height80

4.9.1 Electron Affinity80

4.9.2 Schottky Barrier Height80

4.10 Optical Properties80

4.10.1 Summary of Optical Dispersion Relations80

4.10.2 The Reststrahlen Region80

4.10.3 At or Near the Fundamental Absorption Edge80

4.10.4 The Interband Transition Region81

4.10.5 Free-Carrier Absorption and Related Phenomena81

4.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties81

4.11.1 Elastooptic Effect81

4.11.2 Linear Electrooptic Constant81

4.11.3 Quadratic Electrooptic Constant81

4.11.4 Franz-Keldysh Effect81

4.11.5 Nonlinear Optical Constant81

4.12 Carrier Transport Properties82

4.12.1 Low-Field Mobility：Electrons82

4.12.2 Low-Field Mobility：Holes82

4.12.3 High-Field Transport：Electrons82

4.12.4 High-Field Transport：Holes82

4.12.5 Minority-Carrier Transport：Electrons in p-Type Materials82

4.12.6 Minority-Carrier Transport：Holes in n-Type Materials82

4.12.7 Impact Ionization Coefficient82

5 Wurtzite Aluminum Nitride (w-AlN)83

5.1 Structural Properties83

5.1.1 Ionicity83

5.1.2 Elemental Isotopic Abundance and Molecular Weight83

5.1.3 Crystal Structure and Space Group84

5.1.4 Lattice Constant and Its Related Parameters84

5.1.5 Structural Phase Transition85

5.1.6 Cleavage Plane85

5.2 Thermal Properties85

5.2.1 Melting Point and Its Related Parameters85

5.2.2 Specific Heat86

5.2.3 Debye Temperature87

5.2.4 Thermal Expansion Coefficient88

5.2.5 Thermal Conductivity and Diffusivity88

5.3 Elastic Properties89

5.3.1 Elastic Constant89

5.3.2 Third-Order Elastic Constant90

5.3.3 Young's Modulus,Poisson's Ratio,and Similar90

5.3.4 Microhardness91

5.3.5 Sound Velocity91

5.4 Phonons and Lattice Vibronic Properties92

5.4.1 Phonon Dispersion Relation92

5.4.2 Phonon Frequency92

5.4.3 Mode Grüineisen Parameter95

5.4.4 Phonon Deformation Potential95

5.5 Collective Effects and Related Properties96

5.5.1 Piezoelectric Constant96

5.5.2 Fr？hlich Coupling Constant96

5.6 Energy-Band Structure：Energy-Band Gaps97

5.6.1 Basic Properties97

5.6.2 E0-Gap Region99

5.6.3 Higher-Lying Direct Gap102

5.6.4 Lowest lndirect Gap102

5.6.5 Conduction-Valley Energy Separation103

5.6.6 Direct-Indirect-Gap Transition Pressure103

5.7 Energy-Band Structure：Electron and Hole Effective Masses104

5.7.1 Electron Effective Mass：Γ Valley104

5.7.2 Electron Effective Mass：Satellite Valley104

5.7.3 Hole Effective Mass105

5.8 Electronic Deformation Potential106

5.8.1 Intravalley Deformation Potential：Γ Point106

5.8.2 Intravalley Deformation Potential：High-Symmetry Points106

5.8.3 Intervalley Deformation Potential107

5.9 Electron Affinity and Schottky Barrier Height107

5.9.1 Electron Affinity107

5.9.2 Schottky Barrier Height108

5.10 Optical Properties108

5.10.1 Summary of Optical Dispersion Relations108

5.10.2 The Reststrahlen Region115

5.10.3 At or Near the Fundamental Absorption Edge117

5.10.4 The Interband Transition Region118

5.10.5 Free-Carrier Absorption and Related Phenomena119

5.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties119

5.11.1 Elastooptic Effect119

5.11.2 Linear Electrooptic Constant119

5.11.3 Quadratic Electrooptic Constant119

5.11.4 Franz-Keldysh Effect119

5.11.5 Nonlinear Optical Constant120

5.12 Carrier Transport Properties121

5.12.1 Low-Field Mobility：Electrons121

5.12.2 Low-Field Mobility：Holes122

5.12.3 High-Field Transport：Electrons122

5.12.4 High-Field Transport：Holes122

5.12.5 Minority-Carrier Transport：Electrons in p-Type Materials122

5.12.6 Minority-Carrier Transport：Holes in n-Type Materials122

5.12.7 Impact Ionization Coefficient122

6 Cubic Aluminum Nitride(c-AlN)123

6.1 Structural Properties123

6.1.1 Ionicity123

6.1.2 Elemental Isotopic Abundance and Molecular Weight123

6.1.3 Crystal Structure and Space Group124

6.1.4 Lattice Constant and Its Related Parameters124

6.1.5 Structural Phase Transition124

6.1.6 Cleavage Plane124

6.2 Thermal Properties125

6.2.1 Melting Point and Its Related Parameters125

6.2.2 Specific Heat125

6.2.3 Debye Temperature125

6.2.4 Thermal Expansion Coefficient125

6.2.5 Thermal Conductivity and Diffusivity125

6.3 Elastic Properties125

6.3.1 Elastic Constant125

6.3.2 Third-Order Elastic Constant126

6.3.3 Young's Modulus,Poisson's Ratio,and Similar126

6.3.4 Microhardness127

6.3.5 Sound Velocity127

6 4 Phonons and Lattice Vibronic Properties128

6.4.1 Phonon Dispersion Relation128

6.4.2 Phonon Frequency128

6.4.3 Mode Grüneisen Parameter128

6.4.4 Phonon Deformation Potential129

6.5 Collective Effects and Related Properties129

6.5.1 Piezoelectric Constant129

6.5.2 Fr？hlich Coupling Constant129

6.6 Energy-Band Structure：Energy-Band Gaps129

6.6.1 Basic Properties129

6.6.2 E0-Gap Region131

6.6.3 Higher-Lying Direct Gap132

6.6.4 Lowest Indirect Gap133

6.6.5 Conduction-Valley Energy Separation b134

6.6.6 Direct-Indirect-Gap Transition Pressure134

6.7 Energy-Band Structure：Electron and Hole Effective Masses134

6.7.1 Electron Effective Mass：Γ Valley134

6.7.2 Electron Effective Mass：Satellite Valley135

6.7.3 Hole Effective Mass135

6.8 Electronic Defcrmation Potential136

6.8.1 Intravalley Deformation Potential：Γ Point136

6.8.2 Intravalley Deformation Potential：High-Symmetry Points137

6.8.3 Intervalley Deformation Potential138

6.9 Electron Affinity and Schottky Barrier Height138

6.9.1 Electron Affinity138

6.9.2 Schottky Barrier Height138

6.10 Optical Properties139

6.10.1 Summary of Optical Dispersion Relations139

6.10.2 The Reststrahlen Region141

6.10.3 At or Near the Fundamental Absorption Edge141

6.10.4 The Interband Transition Region141

6.10.5 Free-Carrier Absorption and Related Phenomena141

6.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties142

6.11.1 Elastooptic Effect142

6.11.2 Linear Electrooptic Constant142

6.11.3 Quadratic Electrooptic Constant142

6.11.4 Franz-Keldysh Effect142

6.11.5 Nonlinear Optical Constant142

6.12 Carrier Transport Properties143

6.12.1 Low-Field Mobility：Electrons143

6.12.2 Low-Field Mobility：Holes143

6.12.3 High-Field Transport：Electrons143

6.12.4 High-Field Transport：Holes143

6.12.5 Minority-Carrier Transport：Electrons in p-Type Materials143

6.12.6 Minority-Carrier Transport：Holes in n-Type Materials143

6.12.7 Impact Ionization Coefficient143

7 Aluminum Phosphide(AlP)145

7.1 Structural Properties145

7.1.1 Ionicity145

7.1.2 Elemental Isotopic Abundance and Molecular Weight145

7.1.3 Crystal Structure and Space Group146

7.1.4 Lattice Constant and Its Related Parameters146

7.1.5 Structural Phase Transition147

7.1.6 Cleavage Plane147

7.2 Thermal Properties148

7.2.1 Melting Point and Its Related Parameters148

7.2.2 Specific Heat148

7.2.3 Debye Temperature148

7.2.4 Thermal Expansion Coefficient149

7.2.5 Thermal Conductivity and Diffusivity150

7.3 Elastic Properties150

7.3.1 Elastic Constant150

7.3.2 Third-Order Elastic Constant151

7.3.3 Young's Modulus,Poisson's Ratio,and Similar151

7.3.4 Microhardness152

7.3.5 Sound Velocity152

7.4 Phonons and Lattice Vibronic Properties152

7.4.1 Phonon Dispersion Relation152

7.4.2 Phonon Frequency152

7.4.3 Mode Grüneisen Parameter153

7.4.4 Phonon Deformation Potential153

7.5 Collective Effects and Related Properties153

7.5.1 Piezoelectric Constant153

7.5.2 Fr？hlich Coupling Constant153

7.6 Energy-Band Structure：Energy-Band Gaps154

7.6.1 Basic Properties154

7.6.2 E0-Gap Region155

7.6.3 Higher-Lying Direct Gap156

7.6.4 Lowest Indirect Gap156

7.6.5 Conduction-Valley Energy Separation157

7.6.6 Direct-Indirect-Gap Transition Pressure157

7.7 Energy-Band Structure：Electron and Hole Effective Masses157

7.7.1 Electron Effective Mass：Γ Valley157

7.7.2 Electron Effective Mass：Satellite Valley158

7.7.3 Hole Effective Mass158

7.8 Electronic Deformation Potential159

7.8.1 Intravalley Deformation Potential：Γ Point159

7.8.2 Intravalley Deformation Potential：High-Symmetry Points160

7.8.3 Intervalley Deformation Potential161

7.9 Electron Affinity and Schottky Barrier Height161

7.9.1 Electron Affinity161

7.9.2 Schottky Barrier Height161

7.10 Optical Properties162

7.10.1 Summary of Optical Dispersion Relations162

7.10.2 The Reststrahlen Region163

7.10.3 At or Near the Fundamental Absorption Edge163

7.10.4 The Interband Transition Region164

7.10.5 Free-Carrier Absorption and Related Phenomena164

7.1l Elastooptic,Electrooptic,and Nonlinear Optical Properties164

7.11.1 Elastooptic Effect164

7.11.2 Linear Electrooptic Constant164

7.11.3 Quadratic Electrooptic Constant164

7.11.4 Franz-Keldysh Effect164

7.11.5 Nonlinear Optical Constant164

7.12 Carrier Transport Properties165

7.12.1 Low-Field Mobility：Electrons165

7.12.2 Low-Field Mobility：Holes165

7.12.3 High-Field Transport：Electrons166

7.12.4 High-Field Transport：Holes166

7.12.5 Minority-Carrier Transport：Electrons in p-Type Materials166

7.12.6 Minority-Carrier Transport：Holes in n-Type Materials166

7.12.7 Impact Ionization Coefficient166

8 Aluminum Arsenide(AlAs)167

8.1 Structural Properties167

8.1.1 Ionicity167

8.1.2 Elemental Isotopic Abundance and Molecular Weight167

8.1.3 Crystal Structure and Space Group168

8.1.4 Lattice Constant and Its Related Parameters168

8.1.5 Structural Phase Transition169

8.1.6 Cleavage Plane169

8.2 Thermal Properties170

8.2.1 Melting Point and Its Related Parameters170

8.2.2 Specific Heat170

8.2.3 Debye Temperature171

8.2.4 Thermal Expansion Coefficient172

8.2.5 Thermal Conductivity and Diffusivity173

8.3 Elastic Properties173

8.3.1 Elastic Constant173

8.3.2 Third-Order Elastic Constant173

8.3.3 Young's Modulus,Poisson's Ratio,and Similar173

8.3.4 Microhardness175

8.3.5 Sound Velocity175

8.4 Phonons and Lattice Vibronic Properties175

8.4.1 Phonon Dispersion Relation175

8.4.2 Phonon Frequency176

8.4.3 Mode Grüneisen Parameter178

8.4.4 Phonon Deformation Potential178

8.5 Collective Effects and Related Properties178

8.5.1 Piezoelectric Constant178

8.5.2 Fr？hlich Coupling Constant179

8.6 Energy-Band Structure：Energy-Band Gaps179

8.6.1 Basic Properties179

8.6.2 E0-Gap Region180

8.6.3 Higher-Lying Direct Gap181

8.6.4 Lowest Indirect Gap182

8.6.5 Conduction-Valley Energy Separation184

8.6.6 Direct-Indirect-Gap Transition Pressure184

8.7 Energy-Band Structure：Electron and Hole Effective Masses184

8.7.1 Electron Effective Mass：Γ Valley184

8.7.2 Electron Effective Mass：Satellite Valley185

8.7.3 Hole Effective Mass186

8.8 Electronic Deformation Potential187

8.8.1 Intravalley Deformation Potential：Γ Point187

8.8.2 Intravalley Deformation Potential：High-Symmetry Points188

8.8.3 Intervalley Deformation Potential189

8.9 Electron Affinity and Schottky Barrier Height189

8.9.1 Electron Affinity189

8.9.2 Schottky Barrier Height189

8.10 Optical Properties190

8.10.1 Summary of Optical Dispersion Relations190

8.10.2 The Reststrahlen Region191

8.10.3 At or Near the Fundamental Absorption Edge192

8.10.4 The Interband Transition Region193

8.10.5 Free-Carrier Absorption and Related Phenomena194

8.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties194

8.11.1 Elastooptic Effect194

8.11.2 Linear Electrooptic Constant195

8.11.3 Quadratic Electrooptic Constant195

8.11.4 Franz-Keldysh Effect195

8.11.5 Nonlinear Optical Constant195

8.12 Carrier Transport Properties195

8.12.1 Low-Field Mobility：Electrons195

8.12.2 Low-Field Mobility：Holes196

8.12.3 High-Field Transport：Electrons197

8.12.4 High-Field Transport：Holes197

8.12.5 Minority-Carrier Transport：Electrons in p-Type Materials197

8.12.6 Minority-Carrier Transport：Holes in n-Type Materials198

8.12.7 Impact Ionization Coefficient198

9 Aluminum Antimonide(AlSb)199

9.1 Structural Properties199

9.1.1 Ionicity199

9.1.2 Elemental Isotopic Abundance and Molecular Weight199

9.1.3 Crystal Structure and Space Group200

9.1.4 Lattice Constant and Its Related Parameters200

9.1.5 Structural Phase Transition201

9.1.6 Cleavage Plane201

9.2 Thermal Properties202

9.2.1 Melting Point and Its Related Parameters202

9.2.2 Specific Heat203

9.2.3 Debye Temperature204

9.2.4 Thermal Expansion Coefficient204

9.2.5 Thermal Conductivity and Diffusivity205

9.3 Elastic Properties206

9.3.1 Elastic Constant206

9.3.2 Third-Order Elastic Constant206

9.3.3 Young's Modulus,Poisson's Ratio,and Similar207

9.3.4 Microhardness208

9.3.5 Sound Velocity208

9.4 Phonons and Lattice Vibronic Properties208

9.4.1 Phonon Dispersion Relation208

94 .2 Phonon Frequency209

9.4.3 Mode Grüneisen Parameter211

9.4.4 Phonon Deformation Potential211

9.5 Collective Effects and Related Properties211

9.5.1 Piezoelectric Constant211

9.5.2 Fr？hlich Coupling Constant211

9.6 Energy-Band Structure：Energy-Band Gaps212

9.6.1 Basic Properties212

9.6.2 E0-Gap Region213

9.6.3 Higher-Lying Direct Gap214

9.6.4 Lowest Indirect Gap216

9.6.5 Conduction-Valley Energy Separation218

9.6.6 Direct-Indirect-Gap Transition Pressure218

9.7 Energy-Band Structure：Electron and Hole Effective Masses218

9.7.1 Electron Effective Mass：Γ Valley218

9.7.2 Electron Effective Mass:Satellite Valley219

9.7.3 Hole Effective Mass219

9.8 Electronic Deformation Potential220

9.8.1 Intravalley Deformation Potential：Γ Point220

9.8.2 Intravalley Deformation Potential：High-Symmetry Points221

9.8.3 Intervalley Deformation Potential222

9.9 Electron Affinity and Schottky Barrier Height222

9.9.1 Electron Affinity222

9.9.2 Schottky Barrier Height223

9.10 Optical Properties223

9.10.1 Summary of Optical Dispersion Relations223

9.10.2 The Reststrahlen Region224

9.10.3 At or Near the Fundamental Absorption Edge224

9.10.4 The Interband Transition Region226

9.10.5 Free-Carrier Absorption and Related Phenomena227

9.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties228

9.11.1 Elastooptic Effect228

9.11.2 Linear Electrooptic Constant228

9.11.3 Quadratic Electrooptic Constant228

9.11.4 Franz-Keldysh Effect228

9.11.5 Nonlinear Optical Constant228

9.12 Carrier Transport Properties229

9.12.1 Low-Field Mobility：Electrons229

9.12.2 Low-Field Mobility：Holes230

9.12.3 High-Field Transport：Electrons231

9.12.4 High-Field Transport：Holes232

9.12.5 Minority-Carrier Transport：Electrons in p-Type Materials232

9.12.6 Minority-Carrier Transport：Holes in n-Type Materials232

9.12.7 Impact Ionization Coefficient232